Akinobu Teramoto
Director & Professor of the Research Institute for Semiconductor Engineering, Hiroshima University
Akinobu Teramoto received the B.S. and M.S. degrees in electronic engineering from Tohoku University in 1990 and 1992, respectively and Ph.D. in 2001 in Electronic Engineering from Tohoku University.
In 1992-2002, he worked in Mitsubishi Electric Corporation, Hyogo, Japan. He developed the formation and evaluation technology of gate insulator in MOS LSI and the tunnel oxide in flash memory in Mitsubishi Electric Corporation.
In 2002, he moved to Tohoku University as an associate professor, and he was a full professor at Tohoku University from 2014 to 2019. He studied the device structure, process technology, and evaluation technology of MOS devices.
In 2019, he moved to Hiroshima University as a full professor, and he is the director of Research Institute for Semiconductor Engineering (RISE), Hiroshima University. He continues to study the device structure, process technology, and evaluation technology of MOS devices.
