Equipment, Techniques and Growth for Ultra-High Purity AlGaAs-GaAs Heterostructures by MBE

Abstract: Ultra-high purity aluminum gallium arsenide (AlGaAs)-gallium arsenide (GaAs) heterostructures grown by molecular beam epitaxy (MBE) that host a two-dimensional electron gas (2DEG) are a rich environment for the study of fundamental condensed matter physics and may have applications for quantum computing. I will detail research and investigation into critical equipment and materials engineering issues related to the quality of the fabricated 2DEG systems. I also will present data that demonstrates the critical role gallium purity plays in 2DEG mobility.

Bio: Geoff Gardner received his B.S. and M.S. degrees from Purdue University in Physics with a minor in Electrical and Computer Engineering.  He has held various engineering positions at the Purdue Applied Physics Laboratory and Birck Nanotechnology Center over the past 12 years and currently is a Senior Research Associate for Station Q Purdue.  He has been working closely with Professor Michael Manfra, the Bill and Dee O’Brien Chair Professor of Physics and Astronomy and director of Station Q Purdue, since 2010.