Dr. Appenzeller received the M.S. and Ph.D. degrees in physics from the Technical University of Aachen, Germany in 1991 and 1995. His Ph.D. dissertation investigated quantum transport phenomena in low dimensional systems based on III/V heterostructures. He worked for one year as a Research Scientist in the Research Center in Juelich, Germany before he became an Assistant Professor with the Technical University of Aachen in 1996. During his professorship he explored mesoscopic electron transport in different materials including carbon nanotubes and superconductor-semiconductor-hybride devices. From 1998 to 1999, he was with the Massachusetts Institute of Technology, Cambridge, as a Visiting Scientist, exploring the ultimate scaling limits of silicon MOSFET devices. From 2001 until 2007, he had been with the IBM T.J. Watson Research Center, Yorktown, NY, as a Research Staff Member mainly involved in the investigation of the potential of carbon nanotubes and silicon nanowires for a future nanoelectronics. Since 2007 he is Professor of Electrical and Computer Engineering at Purdue University and Scientific Director of Nanoelectronics in the Birck Nanotechnology Center. In 2014, he receives the Barry M. and Patricia L. Epstein Professorship. His current interests include novel devices based on low-dimensional nano-materials as nanotubes, nanowires, graphene and transition-metal dichalcogenides.
Ramon received his BS degree in Electronics Engineering from University Simon Bolivar in Venezuela and M.Sc in Nanotechnology from University of Twente and MESA & Institute of Nanotechnology in The Netherlands in 2005. His Master's thesis focused on high-resolution Dip-Pen (DPN) Nanolithography using Atomic Force Microscopy to deposit single molecules on bio-reactive monolayers and blockcopolymer platforms. He began his Ph.D work at Purdue University in 2009, which focuses on quantum capacitance measurements as well as design, fabrication, and characterization of Nanowire Tunneling-based FETs.
Yuri received his B.S. in Electrical Engineering from Purdue University in December of 2008. He entered into Purdue's graduate program shortly thereafter in pursuit of a M.S. in Electrical Engineering as a Chappelle Fellow and Astronaut Scholarship Foundation award recipient. He has been working at NASA Johnson Space Center for over 6 years as a flight controller for the International Space Station and electrical design engineer on several programs across the center. His research at Purdue focuses on Spintronics in graphene.
Ashish Verma Penumatcha
Ashish received his undergraduate degree in electrical and communications engineering in 2009 from the National Institute of Technology, Jamshedpur, India. During his Masters at Purdue, he worked on the characterization of SiO2/SiC interfaces for power MOSFETs under the guidance of Prof. James Cooper. He is currently a Ph.D. student at Purdue. His research interests include fabrication and characterization of novel nanoscale devices for logic applications. His primary focus at present is on the experimental demonstration of spin-based logic devices and circuits. (visit Ashish's Academic Website)
Abhijith is currently pursuing his Doctoral studies in the School of Electrical and Computer Engineering at Purdue University. He completed his Bachelor of Engineering in 2010 from Sri Jayachamarajendra College of Engineering, Mysore (affiliated to Visvesvaraya Technological University, India), securing first rank to the university and 6 gold medals. He received the Master of Technology degree in 2012 with the institute medal from Indian Institute of Technology Kharagpur, India. His masters thesis was on memory and switching applications of oxide and nitride based devices, where the main focus was on nanocrystal flash memory devices and RRAM devices. Currently, his research is focused on realizing tunneling field-effect transistors using ultrathin body materials like transition metal dichalcogenides and bilayer graphene.
Yuqi received his BS degree from Xi'an Jiaotong University in 2010, his master's degree from University of Pennsylvania in 2012. From then on, he has being pursuing PhD in Electrical Engineering at Purdue University. His research interests include electronic transport, design, fabrication and simulation of novel nanoscale device with low dimensional material like, CNT nanowire.
Feng is currently pursuing her Doctoral studies in the School of Electrical and Computer Engineering at Purdue University. She completed her BS degree in Electrical Engineering from East China Normal University in 2010. She received the MS degree in Electrical engineering from Shanghai Institute of Microsystem And Information Technology, Chinese Academy of Sciences in 2013. Currently, her research is focused on TMD-based transistors and nanowire devices.
Ruiping received her bachelor's degree in Communication Science and Engineering from Fudan University, Shanghai. During her senior year, she was an exchange student at U.C. Santa Barbara, majoring in electrical engineering. In her graduate study at Wright State University, Ohio, she had been focusing on 2D material modeling and its transport properties analysis. She joined Prof. Appenzeller’s group from June 2013. From 2013, she is pursuing her PhD degree in Electrical and Computer Engineering department at Purdue University. Her current research interest is on functionalized CNT FET and Excitonic coupling effect between nanostructures.
Tingting ShenTingting is currently pursuing PhD in Department of Physics and Astronomy at Purdue University. She received her BS and MS degrees from Physics Department of Shandong University, Jinan, China in 2010 and 2013. Her masters thesis was on ferromagnetic semiconductors and transport properties of magnetic heterostructure junctions. She joined Prof. Appenzeller’s group since Jan. 2014. Currently, her research is focused on TMD-based tunneling field-effect transistors.
Suki ZhangSuki obtained her B.S. degree in Materials Engineering from UCLA in 2013. Her undergraduate research concentrated on synthesizing barium titanate nanoparticles and incorporating these nanoparticles into polymer systems for better actuation performance. She received her Master degree in Materials Science Engineering from Cornell University in 2015. Her project focused on using Laser Spike Annealing to enhance Si+ dopant activation and thermal budget in InGaAs. Currently she is working on her Ph.D study at Electrical Computer Engineering department at Purdue University. Her research mainly focuses on gate dielectric scaling in 2D devices and steep slope tunneling transistors.
Peng received his his BS degree in microelectronics from Tsinghua University, Beijing, China in 2015. His undergraduate research focused on theory and modeling of tunneling FETs. Currently he is working towards his PhD degree in Electrical and Computer Engineering school in Purdue University. His research interest focuses on novel tunneling devices based on 2D materials.
Vaibhav graduated with a Dual degree (B.tech + M.tech) in Electrical Engineering from Indian Institute of Technology Bombay, India in 2015. Specializing in microelectronics, his master's thesis involved modeling of impact ionization based diodes and their applications for RRAM and neuromorphic circuits. Currently he is pursuing doctoral studies in the School of Electrical and Computer Engineering at Purdue and is interested in the field of nanoelectronics with focus on novel spintronic devices for spin logic applications.
Dr. Suprem R. Das received his PhD degree in Physics from Purdue University in 2013. His thesis work focused on low bandgap, high mobility nanoscale materials and devices such as InSb nanowire field effect transistors, hybrid nanowire channel – superconducting electrode devices, and ‘percolation-doped’ hybrid graphene-silver nanowire transparent conductors. He is currently pursuing postdoctoral research with Prof. Appenzeller, Prof. Supriyo Datta and Prof. Zhihong Chen in the School of Electrical and Computer Engineering at Purdue University. His current research interest includes development of novel spintronic devices for spin logic applications using materials exhibiting ‘giant spin hall effect’.
Saptarshi was born in Kolkata, India in 1986. He received his BS degree from Jadavpur University, India. He is currently pursuing his PhD degree in Electrical Engineering from Purdue University. In the summer of 2009, he worked as an intern at IBM T.J.Watson Research Center, Yorktown. He has been nominated as the recipient of IBM PhD Fellowship award for 2011-12. His research focuses on the experimental realization of ferroelectric low-power transistors. He also works on device and circuit modeling and optimization of novel nano transistors for RF applications. Currently, he holds an adjunct Birck Research Scholar at Purdue University, as well as a post-doc researcher at Argonne National Laboratory. (visit Saptarshi's Academic Website)
Former Post Doctoral Researchers
Current affiliation: General Electric, Albany, New York
Current affiliation: PNSensor
Current affiliation: Global Foundries, Germany
Current affiliation: IBM T.J. Watson Research Center
Former PhD Students
Current affiliation: Pennsylvania State University
Current affiliation: Micron, Idaho
Current affiliation: Sandisk, California
Current affiliation: Argonne National Laboratory and Birck Nanotechnology Center, Purdue
Current affiliation: IBM T.J. Watson Research Center
Former Master Students
Current affiliation: Applied Materials, Inc.
Current affiliation: University of South Carolina
Current affiliation: Shmoop
Current affiliation: Marvel Israel Ltd.