Dr. Appenzeller received the M.S. and Ph.D. degrees in physics from the Technical University of Aachen, Germany in 1991 and 1995. His Ph.D. dissertation investigated quantum transport phenomena in low dimensional systems based on III/V heterostructures. He worked for one year as a Research Scientist in the Research Center in Juelich, Germany before he became an Assistant Professor with the Technical University of Aachen in 1996. During his professorship he explored mesoscopic electron transport in different materials including carbon nanotubes and superconductor-semiconductor-hybride devices. From 1998 to 1999, he was with the Massachusetts Institute of Technology, Cambridge, as a Visiting Scientist, exploring the ultimate scaling limits of silicon MOSFET devices. From 2001 until 2007, he had been with the IBM T.J. Watson Research Center, Yorktown, NY, as a Research Staff Member mainly involved in the investigation of the potential of carbon nanotubes and silicon nanowires for a future nanoelectronics. Since 2007 he is Professor of Electrical and Computer Engineering at Purdue University and Scientific Director of Nanoelectronics in the Birck Nanotechnology Center. His current interests include novel devices based on low-dimensional nano-materials as nanowires, nanotubes and graphene.
Josh received his BS degree in Electrical Engineering from Arizona State University, graduating summa cum laude in December 2004, and began attending Purdue as a PhD student in 2006. His research interests include tunnel field-effect transistors, contacts to nanoscale devices, and large-scale integration of low-dimensional materials. He is the recipient of a 2007 National Science Foundation Graduate Research Fellowship. (visit Josh's Academic Website)
Ali received his undergraduate degree in electrical engineering from Shiraz University in Iran and a Master's degrees in Physics from Ball State University in 2006. In the Fall of 2006, he began a Master’s and PhD in the School of Electrical and Computer Engineering at Purdue University. His research interests involve design and fabrication of nanoscale devices and circuits with current emphasis on 1-D ballistic transport in nanowire transistors in the quantum capacitance limit to improve RF linearity.
Sahil completed his undergraduate degree in Electronics and Electrical Communication Engineering from Punjab Engineering College, Chandigarh, India in the year 2006. He worked on devices insensitive to temperature gradients during his undergraduate program. Currently he is pursuing his Doctoral Studies in the School of Electrical and Computer Engineering at Purdue University, West Lafayette, Indiana, USA and is interested in the field of nanoscale device fabrication. He is working on making nanoscale devices using a mono-layer of graphene.
Saptarshi was born in Kolkata, India in 1986. He received his BS degree from Jadavpur University, India. He is currently pursuing his PhD degree in Electrical Engineering from Purdue University. In the summer of 2009, he worked as an intern at IBM T.J.Watson Research Center, Yorktown. He has been nominated as the recipient of IBM PhD Fellowship award for 2011-12. His research focuses on the experimental realization of ferroelectric low-power transistors. He also works on device and circuit modeling and optimization of novel nano transistors for RF applications. (visit Saptarshi's Academic Website)
Hong-Yan received a BS in Electronics Engineering from National Chiao Tung University in Taiwan, and completed Master's degree in Electrical and Computer Engineering in Purdue University in 2007. Her PhD research interests are on novel nanoscale CNT/graphene devices.
Drew received the BS of Engineering degree from the University of Tennessee at Martin, USA, in 2008. He is currently a PhD student at Purdue University. His focus is developing III-V nanowires to access intrinsic effects that occur in the quantum mechanical regime for improved, room temperature transistor operation. (visit Drew's Academic Website)
Caitlin received her BS in Mathematics and Applied Physics from Shippensburg University of Pennsylvania in 2006. There, she worked on the fabrication of organic light emitting diodes. She joined Purdue’s School of Materials Science and Engineering in 2006. Currently, she is supported as a GAANN Fellow. Her PhD work includes the growth and characterization of thin film perovskite structured ferroelectric oxides.
Ramon received his BS degree in Electronics Engineering from University Simon Bolivar in Venezuela and M.Sc in Nanotechnology from University of Twente and MESA & Institute of Nanotechnology in The Netherlands in 2005. His Master's thesis focused on high-resolution Dip-Pen (DPN) Nanolithography using Atomic Force Microscopy to deposit single molecules on bio-reactive monolayers and blockcopolymer platforms. He began his Ph.D work at Purdue University in 2009, which focuses on quantum capacitance measurements as well as design, fabrication, and characterization of Nanowire Tunneling-based FETs.
Jamil received his B.S. degree in Electrical Engineering from the Technion - Israel Institute of Technology in Spring 2008. He began his Master's degree in the school of Electrical and Computer Engineering at Purdue University in Fall 2009 supported by a Fulbright Fellowship. His research interests include design and fabrication of nanoscale devices and study of contacts to carbon-based materials.
Yunfei received his BS degree at Shanghai Jiao Tong University in 2006 and his MS degree with Prof. Mark Lundstrom at Purdue University in 2008. He worked on semi-classical and NEGF simulation of graphene tunneling FETs and spinFETs with Prof. Mark Lundstrom for the first half of his PhD research and is now focused on experimental implementation of All Spin Logic Devices with graphene as the channel material.
Yuri received his B.S. in Electrical Engineering from Purdue University in December of 2008. He entered into Purdue's graduate program shortly thereafter in pursuit of a M.S. in Electrical Engineering as a Chappelle Fellow and Astronaut Scholarship Foundation award recipient. He has been working at NASA Johnson Space Center for over 6 years as a flight controller for the International Space Station and electrical design engineer on several programs across the center. His research at Purdue focuses on Spintronics in graphene.
Ashish received his undergraduate degree in electrical and communications engineering in 2009 from the National Institute of Technology, Jamshedpur, India. During his Masters at Purdue, he worked on the characterization of SiO2/SiC interfaces for power MOSFETs under the guidance of Prof. James Cooper. He is currently a Ph.D. student at Purdue. His research interests include fabrication and characterization of novel nanoscale devices for logic applications. His primary focus at present is on the experimental demonstration of spin-based logic devices and circuits.
Dr. Feste received his M.S. and Ph.D. degrees in physics from the Technical University of Aachen, Germany, in 2004 and 2009, respectively. His thesis work focussed on the fabrication and electrical characterization of strained silicon devices, Si nanowire MOSFETs and Schottky barrier devices with dopant segregation. From 2009 to 2011, he was with the Institute of Bio- and Nanosystems, Research Center Juelich, Germany, where he was engaged in research on strained silicon/SiGe heterostructure FETs with high-k dielectrics. Since 2011, he is with the Department of Electrical and Computer Engineering at Purdue University as a post-doctoral research associate. His current research interests include spintronics and novel devices based on low-dimensional nano-materials.