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Peide Ye - 2018 Arden L. Bement Jr. Award

Peide Ye

Peide “Peter” Ye – 2018 Arden L. Bement Jr. Award

Distinguished Lecture Video

Peide Ye is the Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering in the College of Engineering. He received his Bachelor of Science in electrical engineering in 1988 from Fudan University, Shanghai, China. Ye earned his PhD in condensed matter physics in 1996 from Max Planck Institute for Solid State Research in Stuttgart, Germany.

After working for NTT Basic Research Laboratories, the National High Magnetic Field Laboratory and Princeton University, and Bell Labs/Lucent Technologies/ Agere Systems, Ye joined Purdue in 2005 as an associate professor. He became a full professor in 2010 and a named professor in 2016.

His current research includes atomic semiconductor and physics devices, nanostructures and nanofabrications among other areas. Ye's work in semiconductor technologies is recognized nationally and internationally, and he has been credited with a series of research breakthroughs. Each one was significant enough to be deemed “field-defining.”

Ye has authored and co-authored eight book chapters, more than 200 peer-reviewed articles and made 350 conference presentations, including many invited, keynote and plenary talks. He has been awarded five U.S. patents.

Ye has been the recipient of the Volkswagen Fellowship, the Max Planck Society Fellowship, the NTT Fellowship, the IBM Faculty Award, the Purdue College of Engineering Faculty Award of Excellence in Research and the Sigma Xi Research Award. He is a fellow of the Institute of Electrical and Electronics Engineers and the American Physical Society.

Moore's Law Extension and Beyond


Moore's Law became the “golden rule” for the microelectronics industry and a springboard for innovation. Gordon Moore paved the path for Intel and others to make faster, smaller and more affordable transistors for our modern tools and toys.

In his talk, Ye will review his research efforts at Purdue on materials, structures and device architecture to support the microelectronic industry and extend Moore's Law. The goal of the research is that it will lead to smarter, ubiquitous computing technology and keep us healthier, safer and more productive.

Research Accomplishments

Ye has made fundamental contributions to novel electronic materials and devices in recent years. He has an ability to enter a field, see where the roadblocks are, devise creative solutions and produce results. Among many research accomplishments in applied science and engineering, Ye and his collaborators have:

  • Pioneered atomic layer deposited high-k dielectrics on III-V compound semiconductors and achieved record device performance in III-V metaloxide- semiconductor field-effect transistors (MOSFETs).
  • Developed a new contact engineering process on n-type Ge material to achieve record device performance on Ge N-type MOSFETs and demonstrated the first Ge complementary metal-oxide-semiconductor (CMOS) devices and circuitry.
  • Discovered a new doping technique on 2D material channels and demonstrated record device performance on MoS2 and WS2.
  • Pioneered phosphorene and black phosphorus 2D research and systematically explored their anisotropic electrical, optical, thermal and mechanical properties.

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