Laser lift-off and laser annealing

Printable version

Laser lift-off and laser annealing

General Information

Owner: Bivas Saha

Location: BRK 1217

System Information

General Description

  • homogenized 248nm pulsed excimer laser beam for a broad range of research
  • laser lift-off studies of GaN on sapphire
  • x-y stage for automated rastering of wafers
  • laser annealing vacuum chamber for inert gas ambient
  • laser manufacturer: Lambda Physik (305i KrF excimer laser)


  • homogenized laser beam
  • 1000mJ/cm2 maximum fluence/energy density
  • 10mm x 10mm beam size
  • flat-top profile
  • 1 to 50 Hz
  • 28ns pulse
  • automated x-y stage (Newport)
  • 150mm range
  • 0.5m resolution
  • laser annealing vacuum chamber
  • designed for rough vacuum (<5mTorr)
  • various inert gas ambient possible
  • large 6” quartz viewport
  • holds wafers up to 4” diameter

Materials Compatibility

Not Applicable

Useful Links

* Must use iLab and be a trained user to reserve a slot on this system.