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General Information

iLab Name: STS ASE 2

iLab Core: BRK Etch Core

FIC: Dimitrios Peroulis

Owner: Francis Manfred

Location: Cleanroom-Bay L

Max Wafer Size: 6

System Information

General Description

This system is used to anisotropically etch Silicon substrates.


The STS Deep Reactive Ion Etch (DRIE) system uses SF6/O2 for etching and C4F8 for passivation. It is designed to provide high-aspect-ratio using inductively coupled plasma (ICP) and Bosch process.

Materials Compatibility

Not Applicable


  • Positive photo resist, silicon nitride and silicon oxide can be used as a mask.
  • Negative photo resists, e-beam PR, polymers, polyimide, resin, and all metals are absolutely not allowed due to contamination!
  • Samples smaller than 6” must be bonded to a 6” carrier wafer.
    • Method 1: Use a thick photoresist (AZ 4620, AZ 9260) baked in a 120 C oven for at least 20 minutes.
    • Method 2: Use Crystalbond 555.
    • Please make sure your wafer is properly bonded to the carrier wafer.
    • Ensure there is no residue on the backside of your wafer.
  • You should have thick photo resist as well as silicon oxide on your 6” carrier wafer as an etch stop if you would like to etch deeper than 500 um or all the way through your sample.
  • It is recommended to perform an O2 clean for 15 minutes before starting your process.

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* Must use iLab and be a trained user to reserve a slot on this system.