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General Information

iLab Name: STS AOE

iLab Core: BRK Etch Core

FIC: Dimitrios Peroulis

Owner: Francis Manfred

Location: Cleanroom-Bay L

Max Wafer Size: 4

System Information

General Description

This system is used to dry etch dielectrics, metals, and polymer films.


The STS AOE Deep Reactive Ion Etch (DRIE) system uses SF6, CF4, C4F8, Ar, O2 and He gases. It is designed to provide high-aspect-ratio etching using inductive coupled plasma (ICP). Utilizes weighted clamp which masks 1/4" of the wafer perimeter.

Materials Compatibility

Not Applicable


  • Gold, platinum, silver, and copper are not to be processed in the AOE.
  • Photo resist, Si, SiN, SiO, Ni, Cr, and Al can be used as a mask.
  • Samples smaller than 4” must be bonded to a 4” carrier wafer.
    • Method 1: Use a thick photoresist (AZ 4620, AZ 9260) baked in a 120 C oven for at least 20 minutes.
    • Method 2: Use Crystalbond 555.
    • Please make sure your wafer is properly bonded to the carrier wafer.
    • Ensure there is no residue on the backside of your wafer.
  • It is recommended to perform an O2 clean for 15 minutes before starting your process.

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* Must use iLab and be a trained user to reserve a slot on this system.