OMVPE - Aixtron

Printable version

General Information

FIC: Chen Yang

Owner: Joon Park

Location: brk2221

Max Wafer Size: 4

System Information

General Description

  • Organometallic vapor phase epitaxy (OMVPE) for gallium nitride and gallium antiminde based materials
  • Low growth rates (~1m/hr)
  • Manufacturer: Aixtron Inc. (200/4HT horizontal reactor)

Capabilities

  • Organometallic sources
  • aluminum (TMA)
  • antimony (TMSb)
  • gallium (TMG)
  • indium (Solution TMI)
  • Hydride gas ammonia
  • Carrier gases
  • nitrogen
  • hydrogen
  • Dopants
  • silicon (silane)
  • magnesium (Cp2Mg)
  • Max temp 1200°C

Materials Compatibility

III-V compounds

Notes

Training on this equipment is a long term commitment

Useful Links

* Must use iLab and be a trained user to reserve a slot on this system.