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General Information

FIC: Michael Capano

Owner: Dallas Morisette

Location: brk2221

Max Wafer Size: 2 or 6

System Information

General Description

  • Metal Organic Chemical Vapor Deposition system for growing Silicon Carbide and Graphene.
  • Capable of p and n type growth.


  • Grows single crystal on pieces up to six inch wafers.
  • No metals are allowed in this system.
  • Growth temperatures from 1100 C to 1650 C

Materials Compatibility

Silicon Carbide, Si


Very limited access.

Useful Links

* Must use iLab and be a trained user to reserve a slot on this system.