Ben Haley

Ben Haley
Software Engineer


Ben Haley received his B.S. in Honors Physics from Purdue University in 1998, a M.S. in Engineering Applied Science from UC Davis 2001, and his Ph.D. in Engineering Applied Science from UC Davis in 2005.

Selected Publications

Benjamin P. Haley, Gerhard Klimeck, Mathieu Luisier, Dragica Vasileska, Abhijeet Paul, Swaroop Shivarajapura, Diane L. Beaudoin, “Computational nanoelectronics research and education at”, Journal of Computational Electronics, Volume 8, pg. 124 (2009).

Benjamin P. Haley, Sunhee Lee, Mathieu Luisier, Gerhard Klimeck, Hoon Ryu, Faisal Saied, Steve Clark, Hansang Bae, “Advancing Nanoelectronic Device Modeling through Peta-Scale Computing and Deployment on nanoHUB”, Proceedings of the SciDAC Conference, San Diego, June 15-19, 2009, J. Phys.: Conf. Ser. Vol. 180, 012075

Shaikh Ahmed, Neerav Kharche, Rajib Rahman, Muhammad Usman, Sunhee Lee, Hoon Ryu, Hansang Bae, Steve Clark, Benjamin Haley,Maxim Naumov, Faisal Saied, Marek Korkusinski, Rick Kennel, Michael McLennan, Timothy B. Boykin, and Gerhard Klimeck, ”Multimillion Atom Simulations with NEMO 3-D ”, Springer Encyclopedia for Complexity, 2008

Maxim Naumov, Sunhee Lee, Ben Haley, Rajib Rahman, Hoon Ryu, Faisal Saied, Steve Clark, and Gerhard Klimeck, ”Eigenvalue Solvers for Atomistic Simulations of Electronic Structures with NEMO-3D”, Journal of Computational Electronics, 2008, Vol. 7, pg. 297300 (2008)

Gerhard Klimeck, Shaikh Ahmed, Hansang Bae, Neerav Kharche, Steve Clark, Benjamin Haley, Sunhee Lee, Maxim Naumov, Hoon Ryu, Faisal Saied, Marta Prada, Marek Korkusinski, and Timothy B. Boykin, ”Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I - Models and Benchmarks”, Special Issue on Nanoelectronic Device Modeling in IEEE Transactions on Electron Devices (INVITED) Vol. 54, Issue 9, Sept. 2007, Page(s):2079 - 2089 (2007),

Benjamin P. Haley and Keith M. Beardmore and Niels Grønbech-Jensen, Vacancy clustering and diffusion in silicon: Kinetic Lattice Monte Carlo simulations, Phys. Rev. B. 74, 045217, (2006).

Benjamin P. Haley and Niels Grønbech-Jensen, Vacancy-assisted Arsenic Diffusion and Timedependent Clustering Effects in Silicon, Phys. Rev. B 71, 195203 (2005). K.M. Beardmore,W.Windl, B. P. Haley, N. Grønbech-Jensen, DiffusionMechanisms and Capture Radii in Silicon, in Proceedings of the 2002 International Conference on Computational Nanoscience, (Computational Publications, Cambridge, MA, 2002), p. 466.