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Timothy Sands

Executive Vice President for Academic Affairs and Provost             

T. D. Sands, J. Washburn and R. Gronsky, "High Resolution Observations of Copper Vacancy Ordering in Chalcocite (Cu2S) and the Transformation to Djurleite (Cu1.94-1.97S)," physica status solidi (a) 72 (1982) 551; (LBL-13746).

T. Sands, J. Washburn and R. Gronsky, "Interface Morphology and Phase Distribution in the Cu2-xS/CdS Heterojunction: A Transmission Electron Microscope Investigation," Solar Energy Materials 10(1984) 349; (LBL-17677).

D. K. Sadana, T. Sands and J. Washburn, "High Resolution Transmission Electron Microscopy Study of Se+-Implanted and Annealed GaAs: Mechanisms of Amorphization and Recrystallization," Appl. Phys. Lett. 44 (1984) 623; (LBL-17267).

T. Sands, D. K. Sadana, R. Gronsky and J. Washburn, "High Resolution Structural Characterization of the Amorphous-Crystalline Interface in Se+-Implanted GaAs," Appl. Phys. Lett. 44 (1984) 874; (LBL-17035).

T. Sands, J. Washburn, R. Gronsky, W. Maszara, D.K. Sadana and G. A. Rozgonyi, "Near-Surface Defects Formed during Rapid Thermal Annealing of Preamorphized and BF2
+-Implanted Silicon," Appl. Phys. Lett. 45 (1984) 982; (LBL-18000).

M. F. Zhu, I. Suni, M-A. Nicolet and T. Sands, "Reaction of amorphous Ni-W and Ni-N-W Films with Substrate Silicon," J. Appl. Phys. 56(1984) 2740.

T. Sands, J. Washburn and R. Gronsky, "Crystallographic Relationships between GaAs, As and Ga2O3at the GaAs-Thermal Oxide Interface," Materials Lett. 3(1985) 247; (LBL-18636).

D. K. Sadana, J. M. Zavada, H. A. Jenkinson and T. Sands, "High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide," Appl. Phys. Lett. 47(1985) 691.

T. Sands, J. Washburn, E. Myers and D. K. Sadana, "On the Origins of Structural Defects in BF2 +-Implanted and Rapid-Thermally-Annealed Silicon: Conditions for Defect-free Regrowth," Nucl. Instruments and Methods B7/8(1985) 337.

J. M. Hong, S. Wang, T. Sands, J. Washburn, J. D. Flood, J. L. Merz and T. Low, "Selective Area Epitaxy of GaAs through Silicon Dioxide Windows by Molecular Beam Epitaxy," Appl. Phys. Lett. 48(1986) 142.

J. M. Hong, S. Wang, J. D. Flood, J. L. Merz, T. Sands and J. Washburn, "Summary Abstract: Selective-Area Epitaxy of GaAs through Silicon Dioxide Windows by Molecular Beam Epitaxy," J. Vac. Sci. Technol. B4 (1986) 629.

T. Banwell, M-A. Nicolet, T. Sands and P. J. Grunthaner, "Chemical Effects in Ion Mixing of a Ternary System (metal-SiO2)," Appl. Phys. Lett. 50(1987) 571.

T. Sands, V. G. Keramidas, R. Gronsky and J. Washburn, "Ternary Phases in the Pd-GaAs System: Implications for Shallow Contacts to GaAs," Materials Lett. 3 (1985) 409; (LBL-19379).

T. Sands, V. G. Keramidas, R. Gronsky and J. Washburn, "Initial Stages of the Pd-GaAs Reaction: Formation and Decomposition of Ternary Phases," Thin Solid Films 136 (1986) 105; (LBL-19133).

T. Sands, V. G. Keramidas, J. Washburn and R. Gronsky, "Structure and Composition of NixGaAs," Appl. Phys. Lett. 48, (1986) 402; (LBL-20376).

J. Ding, J. Washburn, T. Sands and V. G. Keramidas, "In/GaAs Reaction: Effect of an Intervening Native Oxide Layer," Appl. Phys. Lett. 49(1986) 818; (TM-ARH-008173).

Invited-T. Sands, "Contacts to Compound Semiconductors," J. of Metals (JOM) 38(1986) 31; (TM-ARH-002908).18. K-M. Yu, S. K. Cheung, T. Sands, J. M. Jaklevic, N. W. Cheung and E. E. Haller, "Schottky Barrier Degradation of the W/GaAs System after High Temperature Annealing," J. Appl. Phys. 60 (1986) 3235; (TMARH-006069).

T. Sands, V. G. Keramidas, A. J. Yu, K. M. Yu, R. Gronsky and J. Washburn, "Ni, Pd and Pt on GaAs: A Comparative Study of Interfacial Structures, Compositions and Reacted Film Morphologies," J. Mater. Res. 2(1987) 262; (TM-ARH-008064).

T. Sands, C. C. Chang, V. G. Keramidas, K. M. Krishnan and J.Washburn, "The Ni-InP Reaction: Formation of Amorphous and Crystalline Ternary Phases," Appl. Phys. Lett. 50 (1987) 1346.

T. Sands, V. G. Keramidas, K-M. Yu, J. Washburn and K. M. Krishnan, "A Comparative Study of Phase Stability and Film Morphology in Thin-Film M/GaAs Systems (M= Co, Rh, Ir, Ni, Pd and Pt)," J. Appl. Phys. 62(1987) 2070.

K. M. Yu, S. K. Cheung, T. Sands, J. M. Jaklevic and E. E. Haller, "Correlation between Solid State Reactions and Electrical Properties of the Rh/GaAs Schottky Contact," J. Appl. Phys. 61 (1987) 1099; (LBL-21889, TMARH-008009).

Kin Man Yu, T. Sands, J. M. Jaklevic and E. E. Haller, "Interfacial Interactions of Evaporated Iridium Thin Films with (100) GaAs," J. Appl. Phys. 62(1987) 1815.

K. M. Yu, W. Walukiewicz, J. M. Jaklevic, E. E. Haller and T. Sands, "Effects of Interface Reactions on Electrical Characteristics of Metal-GaAs Contacts," Appl. Phys. Lett. 51(1987) 189.

Invited-T. Sands, "Compound Semiconductor Contact Metallurgy," Mater. Sci. Engin. B 1(1988) 289; (TMARH-012196).

T. Sands, E. D. Marshall and L. C. Wang, "Solid-Phase Regrowth of Compound Semiconductors by ReactionDriven Decomposition of Intermediate Phases," J. Mater. Res. 3 (1988) 914; (TM-ARH-010795).

L. C. Wang, B. Zhang, F. Fang, E. D. Marshall, S. S. Lau, T. Sands and T. F. Kuech, "An Investigation of a Non-Spiking Ohmic Contact to n-GaAs Using the Si/Pd System," J. Mater. Res. 3,922 (1988); (TM-ARH-011491).

R. Caron-Popowich, J. Washburn, T. Sands and A. S. Kaplan, "Phase Formation in the Pd-InP System," J. Appl. Phys. 64, 4909 (1988); (TM-ARH-012195).

T. Sands, "Stability and Epitaxy of NiAl and Related Intermetallic Films on III-V Compound Semiconductors," Appl. Phys. Lett. 52 (1988) 197; (TM-ARH-010392).

T. Sands, W. K. Chan, C. C. Chang, E. W. Chase and V. G. Keramidas, "NiAl/n-GaAs Schottky Diodes: Barrier Height Enhancement by High-Temperature Annealing," Appl. Phys. Lett. 52(1988) 1338; (TM-ARH-010820).

T. Sands, J. P. Harbison, W. K. Chan, S. A. Schwarz, C. C. Chang, C. J. Palmstrøm and V. G. Keramidas, "Epitaxial Growth of GaAs/NiAl/GaAs Heterostructures," Appl. Phys. Lett. 52, 1216 (1988); (TM-ARH-010684).

J. P. Harbison, T. Sands, N. Tabatabaie, W. K. Chan, L. T. Florez and V. G. Keramidas, "Molecular Beam Epitaxial Growthof Ultrathin Buried Metal Layers: (Al,Ga)As/NiAl/(Al,Ga)As Heterostructures," Appl. Phys. Lett. 53, 1717 (1988); (TM-ARH-012078).

N. Tabatabaie, T. Sands, J. P. Harbison, H. L. Gilchrist and V. G. Keramidas, "Negative Differential Resistance in AlAs/NiAl/AlAs Heterostructures: Evidence for Size Quantization in Metals," Appl. Phys. Lett.53(1988) 2528; (TM-ARH-012257).

J. P. Harbison, T. Sands, N. Tabatabaie, W. K. Chan, L. T. Florez, and V. G. Keramidas, "MBE Growth of AlGaAs/NiAl/AlGaAs Heterostructures: A Novel Epitaxial III-V Semiconductor/Metal System, J. Crystal Growth 95(1989) 425; (TM-ARH-012077). 

C. J. Palmstrøm, K. C. Garrison, S. Mounier, T. Sands, C. L. Schwartz, N. Tabatabaie, S. J. Allen, Jr., H. L. Gilchrist, and P. F. Miceli, "Growth of Epitaxial Rare-Earth Arsenide/(100) GaAs and GaAs/Rare-Earth Arsenide/(100) GaAs Structures," J. Vac. Sci. Technol. B 7, (1989) 747; (TM-ARH-015067).

C. J. Palmstrøm, K. C. Garrison, B. O. Fimland, T. Sands and R. A. Bartynski, "Epitaxial CoGa and Textured CoAs Contacts to Ga1-xAlxAs Fabricated by Molecular Beam Epitaxy," J. Appl. Phys. 65(1989) 4753; (TMARH-013153).

S. J. Allen, Jr., N. Tabatabaie, C. J. Palmstrøm, G. W. Hull, T. Sands, F. DeRosa, H. L. Gilchrist, and K. C. Garrison, "ErAs Epitaxial Layers Buried in GaAs: Magneto-transport and Spin Disorder Scattering," Phys. Rev. Lett. 62(1989) 2309; (TM-ARH-013497).

N. Tabatabaie, T. Sands, J. P. Harbison, H. L. Gilchrist, L. T. Florez and V. G. Keramidas, "Electrical Resistivity of Thin Epitaxial NiAl Buried in (Al,Ga)As," Appl. Phys. Lett. 54 (1989) 2112; (TM-ARH-013509).

S. J. Allen, Jr., N. Tabatabaie, C. J. Palmstrøm, S. Mounier, G. W. Hull, T. Sands, F. DeRosa, H. L. Gilchrist and K. C. Garrison, "Magneto-transport in Ultrathin ErAs layersBuried in GaAs," Surface Science 228, (1990) 13; (TM-ARH-014288).

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