PRISM at Discovery Park

"Characterization of the Thermal and Mechanical Response of GaN High Electron Mobility Devices"

January 13 @ 3:00 PM - 4:00 PM - Birck 1001

Abstract: The high power density in AlGaN/GaNhigh electron mobility devices (HEMTs) leads intense heating which is detrimental to their and reliability. The heating is primarily caused by the generation of longitudinal optical phonons which build-up in the channel resulting in the hot phonon effect. Although high thermal conductivity substrates have been used to dissipate heat from these devices (e.g., SiC, diamond), the self heating in AlGaN/GaNheterostructuresremains a critical issue in the success of their commercialization. The large phononicband gap provides additional resistance in dissipating the thermal energy from these devices which has received little attention from researchers. In addition, the stress fields induced in AlGaN/GaNHEMTs that includes residual stresses, thermoelasticstresses, and inverse piezoelectric stresses, also significantly impacts the device reliability. However, there remains few measurements and understanding of the stress and temperature fields in devices and how they relate to device reliability.

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