Birck Nanotechnology Center

Jerry M. Woodall


Barry M. and Patricia L. Epstein Distinguished Professor of Electrical and Computer Engineering


Contact Information:

Phone: (765) 494-3479



BS, Massachusetts Institute of Technology, 1960
PhD, Cornell University, 1982


Research Interests:

I work on exploratory compound semiconductor materials and devices for high speed and energy conversion. Specifically, I work on InAs and related alloys for high speed and GaP, ZnSe and GaAsZnSe for solar cells. These materials are particularly important for use as the top high band gap cell for ulta efficiency photovoltaic (PV) systems that use optical concentration. I also work on using Al rich alloys to split water into hydrogen and heat.


Impact Statement & Explanation of Research:

At present there are no practical high band (2.4 eV) materials available for the top cell. If success my solar cell projects will finally enable economically viable PV systems capable of >50% solar power to electrical power conversion efficiencies.

If my water splitting project is successful, it will enable an economically viable green technology that will effect a 10 percent reduction in fossil fuel use for all of the US energy consumption.



Recent publications:

1. Chen A, Woodall JM: Field-effect transistors on molecular beam epitaxy GaP. Applied Physics Letters 2007, 90.

2. Li N, Harmon ES, Salzman DB, Zakharov DN, Jeon JH, Stach E, Woodall JM, Wang XW, Ma TP, Walker F: Molecular beam epitaxy growth of InAs and In0.8Ga0.2As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications. Journal of Vacuum Science & Technology B 2008, 26:1187-1190.

3. Woodall JM, Ziebarth J, Allen CR, Asme: The science and technology of Al-Ga alloys as a material for energy storage, transport and splitting water. In 2nd Energy Nanotechnology International Conference; Sep 05-07; Santa Clara, CA. 2007: 15-17.

4. Yang T, Xuan Y, Zemlyanov D, Shen T, Wu YQ, Woodall JM, Ye PD, Aguirre-Tostado FS, Milojevic M, McDonnell S, Wallace RM: Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric. Applied Physics Letters 2007, 91.


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