Birck Nanotechnology Center

BNC/NCN affiliated publications

Nanoelectronics and Semiconductor Devices

2011

Allen, M.W., Zemlyanov, D.Y., Waterhouse, G.I.N., Metson, J.B., Veal, T.D., McConville, C.F. and Durbin, S.M. Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors. Applied Physics Letters, 98(10).

Behin-Aein, B., Sarkar, A., Srinivasan, S. and Datta, S. Switching energy-delay of all spin logic devices. Applied Physics Letters, 98(12).

Das, S.R., Delker, C.J., Zakharov, D., Chen, Y.P., Sands, T.D. and Janes, D.B. Room temperature device performance of electrodeposited InSb nanowire field effect transistors. Applied Physics Letters, 98(24).

Deora, S., Paul, A., Bijesh, R., Huang, J., Klimeck, G., Bersuker, G., Krisch, P.D. and Jammy, R. Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs. IEEE Electron Device Letters, 32(3), 255-257.

Gu, J.J., Wu, Y.Q. and Ye, P.D. Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors. Journal of Applied Physics, 109(5).

Jalilian, R., Jauregui, L.A., Lopez, G., Tian, J.F., Roecker, C., Yazdanpanah, M.M., Cohn, R.W., Jovanovic, I. and Chen, Y.P. Scanning gate microscopy on graphene: charge inhomogeneity and extrinsic doping. Nanotechnology, 22(29).

Kim, R., Rakshit, T., Kotlyar, R., Hasan, S. and Weber, C.E. Effects of Surface Orientation on the Performance of Idealized III-V Thin-Body Ballistic n-MOSFETs. IEEE Electron Device Letters, 32(6), 746-748.

Koduvayur, S.P., Lyanda-Geller, Y., Khlebnikov, S., Csathy, G., Manfra, M.J., Pfeiffer, L.N., West, K.W. and Rokhinson, L.P. Effect of Strain on Stripe Phases in the Quantum Hall Regime. Physical Review Letters, 106(1).

Kumar, A., Samkharadze, N., Csathy, G.A., Manfra, M.J., Pfeiffer, L.N. and West, K.W. Particle-hole asymmetry of fractional quantum Hall states in the second Landau level of a two-dimensional hole system. Physical Review B, 83(20).

Lee, C., Srisungsitthisunti, P., Park, S., Kim, S., Xu, X.F., Roy, K., Janes, D.B., Zhou, C.W., Ju, S. and Qi, M.H. Control of Current Saturation and Threshold Voltage Shift in Indium Oxide Nanowire Transistors with Femtosecond Laser Annealing. ACS Nano, 5(2), 1095-1101.

Luisier, M. Phonon-limited and effective low-field mobility in n- and p-type 100 -, 110 -, and 111 -oriented Si nanowire transistors. Applied Physics Letters, 98(3).

Montgomery, K.H., Allen, C.R., Wildeson, I.H., Jeon, J.H., Ramdas, A.K. and Woodall, J.M. Gettered GaP Substrates for Improved Multijunction Solar Cell Devices. Journal of Electronic Materials, 40(6), 1457-1460.

Padalkar, S., Capadona, J.R., Rowan, S.J., Weder, C., Moon, R.J. and Stanciu, L.A. Self-assembly and alignment of semiconductor nanoparticles on cellulose nanocrystals. Journal of Materials Science, 46(17), 5672-5679.

Prada, M., Klimeck, G. and Joynt, R. Spin-orbit splittings in Si/SiGe quantum wells: from ideal Si membranes to realistic heterostructures. New Journal of Physics, 13.

Salamat, S., Ho, X.N., Rogers, J.A. and Alam, M.A. Intrinsic Performance Variability in Aligned Array CNFETs. IEEE Transactions on Nanotechnology, 10(3), 439-444.

Samkharadze, N., Kumar, A., Manfra, M.J., Pfeiffer, L.N., West, K.W. and Csathy, G.A. Integrated electronic transport and thermometry at milliKelvin temperatures and in strong magnetic fields. Review of Scientific Instruments, 82(5).

Singh, S. and Cooper, J.A. Bipolar Integrated Circuits in 4H-SiC. IEEE Transactions on Electron Devices, 58(4), 1084-1090.

Sui, Y.S.Y., Low, T., Lundstrom, M. and Appenzeller, J. Signatures of Disorder in the Minimum Conductivity of Graphene. Nano Letters, 11(3), 1319-1322.

Tettamanzi, G.C., Paul, A., Lee, S., Mehrotra, S.R., Collaert, N., Biesemans, S., Klimeck, G. and Rogge, S. Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs. IEEE Electron Device Letters, 32(4), 440-442.

Wang, W.K., Hwang, J.C.M., Xuan, Y. and Ye, P.D.D. Analysis of Electron Mobility in Inversion-Mode Al(2)O(3)/In(x)Ga(1-x)As MOSFETs. IEEE Transactions on Electron Devices, 58(7), 1972-1978.

Watson, J.D., Mondal, S., Csathy, G.A., Manfra, M.J., Hwang, E.H., Das Sarma, S., Pfeiffer, L.N. and West, K.W. Scattering mechanisms in a high-mobility low-density carbon-doped (100) GaAs two-dimensional hole system. Physical Review B, 83(24).

Wrachien, N., Cester, A., Wu, Y.Q., Ye, P.D., Zanoni, E. and Meneghesso, G. Effects of Positive and Negative Stresses on III-V MOSFETs With Al(2)O(3) Gate Dielectric. IEEE Electron Device Letters, 32(4), 488-490.

Xu, M., Wang, R.S. and Ye, P.D. GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited Al(2)O(3) as Gate Dielectric. IEEE Electron Device Letters, 32(7), 883-885.

Xu, Q., Sadiek, G. and Kais, S. Dynamics of entanglement in a two-dimensional spin system. Physical Review A, 83(6).

Zhao, Y.J.Z.Y.J., Smith, J.T., Appenzeller, J. and Yang, C. Transport Modulation in Ge/Si Core/Shell Nanowires through Controlled Synthesis of Doped Si Shells. Nano Letters, 11(4), 1406-1411.

 

2010

Childres, I., Jauregui, L.A., Foxe, M., Tian, J.F., Jalilian, R., Jovanovic, I. and Chen, Y.P. Effect of electron-beam irradiation on graphene field effect devices. Applied Physics Letters, 2010, 97(17).

Gu, J.J., Liu, Y.Q., Xu, M., Celler, G.K., Gordon, R.G. and Ye, P.D. High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer. Applied Physics Letters, 2010, 97(1).

Kim, S., Delker, C., Chen, P.C., Zhou, C.W., Ju, S. and Janes, D.B. Oxygen plasma exposure effects on indium oxide nanowire transistors. Nanotechnology, 2010, 21(14).

Kim, S., Park, J., Ju, S. and Mohammadi, S. Fully Transparent Pixel Circuits Driven by Random Network Carbon Nanotube Transistor Circuitry. ACS Nano, 2010, 4(6), 2994-2998.

Lahiji, R.R., Sharifi, H., Katehi, L.P.B. and Mohammadi, S. 3-D CMOS Circuits Based on Low-Loss Vertical Interconnects on Parylene-N. IEEE Transactions on Microwave Theory and Techniques, 2010, 58(1), 48-56.

Naik, G.V. and Boltasseva, A. Semiconductors for plasmonics and metamaterials. Physica Status Solidi-Rapid Research Letters, 2010, 4(10), 295-297.

Neophytou, N., Kim, S.G., Klimeck, G. and Kosina, H. On the bandstructure velocity and ballistic current of ultra-narrow silicon nanowire transistors as a function of cross section size, orientation, and bias. Journal of Applied Physics, 2010, 107(11).

Nguyen, N.V., Xu, M., Kirillov, O.A., Ye, P.D., Wang, C., Cheung, K. and Suehle, J.S. Band offsets of Al2O3/InxGa1-xAs (x=0.53 and 0.75) and the effects of postdeposition annealing. Applied Physics Letters, 2010, 96(5).

Rabieirad, L., Martinez, E.J. and Mohammadi, S. An Integration Technology for RF and Microwave Circuits Based on Interconnect Programming. IEEE Transactions on Advanced Packaging, 2010, 33(2), 362-369.

Scott, A. and Janes, D.B. Gold/Molecule/p(+) Si Devices: Variable Temperature Electronic Transport. IEEE Transactions on Nanotechnology, 2010, 9(4), 494-503.

Scott, A., Risko, C., Valley, N., Ratner, M.A. and Janes, D.B. Molecular modulation of Schottky barrier height in metal-molecule-silicon diodes: Capacitance and simulation results. Journal of Applied Physics, 2010, 107(2).

Tian, J.F., Jauregui, L.A., Lopez, G., Cao, H. and Chen, Y.P. Ambipolar graphene field effect transistors by local metal side gates. Applied Physics Letters, 2010, 96(26).

Wang, W., Deng, J., Hwang, J.C.M., Xuan, Y., Wu, Y. and Ye, P.D. Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 2010, 96(7).

Wang, X.K. and Cooper, J.A. High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers. IEEE Transactions on Electron Devices, 2010, 57(2), 511-515.

Yu, L., Weon, D.H., Kim, J.I. and Mohammadi, S. Integrated high-inductance three-dimensional toroidal inductors. Journal of Vacuum Science & Technology B, 2010, 28(5), 903-907.

 

2009

Carpenter, P.D., Lodha, S., Janes, D.B. and Walker, A.V. Characterization of gold contacts in GaAs-based molecular devices: Relating structure to electrical properties. Chemical Physics Letters, 2009, 472(4-6), 220-223.

Franklin, A.D., Sayer, R.A., Sands, T.D., Fisher, T.S. and Janes, D.B. Toward surround gates on vertical single-walled carbon nanotube devices. Journal of Vacuum Science & Technology B, 2009, 27(2), 821-826.

Low, T., Hong, S., Appenzeller, J., Datta, S. and Lundstrom, M.S. Conductance Asymmetry of Graphene p-n Junction. IEEE Transactions on Electron Devices, 2009, 56(6), 1292-1299.

Xu, M., Wu, Y.Q., Koybasi, O., Shen, T. and Ye, P.D. Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics. Applied Physics Letters, 2009, 94(21).

Kim, S., Ju, S., Back, J.H., Xuan, Y., Ye, P.D., Shim, M., Janes, D.B. and Mohammadi, S. Fully Transparent Thin-Film Transistors Based on Aligned Carbon Nanotube Arrays and Indium Tin Oxide Electrodes. Advanced Materials, 2009, 21(5), 564-+.

Janes, D. Rectifying current behaviours. Nature Chemistry, 2009, 1(8), 601-603.

Singh, D., Guo, X.H., Alexeenko, A., Murthy, J.Y. and Fisher, T.S. Modeling of subcontinuum thermal transport across semiconductor-gas interfaces. Journal of Applied Physics, 2009, 106(2).

Franklin, A.D., Sayer, R.A., Sands, T.D., Janes, D.B. and Fisher, T.S. Vertical Carbon Nanotube Devices With Nanoscale Lengths Controlled Without Lithography. IEEE Transactions on Nanotechnology, 2009, 8(4), 469-476.

Scott, A. and Janes, D.B. Characterization of electrochemically grafted molecular layers on silicon for electronic device applications. Journal of Applied Physics, 2009, 105(7).

Wu, Y.Q., Wang, W.K., Koybasi, O., Zakharov, D.N., Stach, E.A., Nakahara, S., Hwang, J.C.M. and Ye, P.D. 0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET. IEEE Electron Device Letters, 2009, 30(7), 700-702.

DaSilva, M., Schneider, M.M., Wood, D.S., Kim, B.J., Stach, E.A. and Sands, T.D. The Use of Polyethyleneimine to Control the Growth-Front Morphology of Electrochemically Deposited Gold Nanowires for Engineered Nanogap Electrodes. Small, 2009, 5(21), 2387-2391.

Harutyunyan, A.R., Chen, G.G., Paronyan, T.M., Pigos, E.M., Kuznetsov, O.A., Hewaparakrama, K., Kim, S.M., Zakharov, D., Stach, E.A. and Sumanasekera, G.U. Preferential Growth of Single-Walled Carbon Nanotubes with Metallic Conductivity. Science, 2009, 326(5949), 116-120.

Jeong, C., Antoniadis, D.A. and Lundstrom, M.S. On Backscattering and Mobility in Nanoscale Silicon MOSFETs. IEEE Transactions on Electron Devices, 2009, 56(11), 2762-2769.

Rabieirad, L., Martinez, E.J. and Mohammadi, S. Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits. IEEE Transactions on Microwave Theory and Techniques, 2009, 57(6), 1439-1446.

Rabieirad, L. and Mohammadi, S. Reconfigurable CMOS Tuners for Software-Defined Radio. IEEE Transactions on Microwave Theory and Techniques, 2009, 57(11), 2768-2774.

Rawat, V., Zakharov, D.N., Stach, E.A. and Sands, T.D. Pseudomorphic stabilization of rocksalt GaN in TiN/GaN multilayers and superlattices. Physical Review B, 2009, 80(2).

Shen, T., Gu, J.J., Xu, M., Wu, Y.Q., Bolen, M.L., Capano, M.A., Engel, L.W. and Ye, P.D. Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001). Applied Physics Letters, 2009, 95(17).

Bhuvana, T., Smith, K.C., Fisher, T.S. and Kulkarni, G.U. Self-assembled CNT circuits with ohmic contacts using Pd hexadecanethiolate as in situ solder. Nanoscale, 2009, 1(2), 271-275.

Kim, R. and Lundstrom, M.S. Physics of Carrier Backscattering in One- and Two-Dimensional Nanotransistors. IEEE Transactions on Electron Devices, 2009, 56(1), 132-139.

Sui, Y. and Appenzeller, J. Screening and Interlayer Coupling in Multilayer Graphene Field-Effect Transistors. Nano Letters, 2009, 9(8), 2973-2977.

Walden, G., McNutt, T., Sherwin, M., Van Campen, S., Singh, R. and Howell, R. Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion. In Suzuki, A., Okumura, H., Kimoto, T., Fuyuki, T., Fukuda, K. and Nishizawa, S., eds. Silicon Carbide and Related Materials 2007, Pts 1 and 2, pp. 1139-11422009).

 

2008

Ye, P.D. Main determinants for III-V metal-oxide-semiconductor field-effect transistors (invited). Journal of Vacuum Science & Technology A, 2008, 26(4), 697-704.

Tamaki, T., Walden, G.G., Sui, Y. and Cooper, J.A. Optimization of ON-state and switching performances for 15-20-kV 4H-SiC IGBTs. IEEE Transactions on Electron Devices, 2008, 55(8), 1920-1927.

Tamaki, T., Walden, G.G., Sui, Y. and Cooper, J.A. Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs. IEEE Transactions on Electron Devices, 2008, 55(8), 1928-1933.

Lee, J.Y., Singh, S. and Cooper, J.A. Demonstration and characterization of bipolar monolithic integrated circuits in 4H-SiC. IEEE Transactions on Electron Devices, 2008, 55(8), 1946-1953.

Yang, T., Liu, Y., Ye, P.D., Xuan, Y., Pal, H. and Lundstrom, M.S. Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate. Applied Physics Letters, 2008, 92(25).

Overby, M., Chernyshov, A., Rokhinson, L.P., Liu, X. and Furdyna, J.K. GaMnAs-based hybrid multiferroic memory device. Applied Physics Letters, 2008, 92(19).

Lan, C., Srisungsitthisunti, P., Amama, P.B., Fisher, T.S., Xu, X.F. and Reifenberger, R.G. Measurement of metal/carbon nanotube contact resistance by adjusting contact length using laser ablation. Nanotechnology, 2008, 19(12).

Wu, Y.Q., Ye, P.D., Capano, M.A., Xuan, Y., Sui, Y., Qi, M., Cooper, J.A., Shen, T., Pandey, D., Prakash, G. and Reifenberger, R. Top-gated graphene field-effect-transistors formed by decomposition of SiC. Applied Physics Letters, 2008, 92(9).

Xuan, Y., Ye, P.D. and Shen, T. Substrate engineering for high-performance surface-channel III-V metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 2007, 91(23).

Rokhinson, L.P., Pfeiffer, L.N. and West, K.W. Detection of spin polarization in quantum point contacts. Journal of Physics-Condensed Matter, 2008, 20(16).

Brammertz, G., Lin, H.C., Martens, K., Mercier, D., Merckling, C., Penaud, J., Adelmann, C., Sioncke, S., Wang, W.E., Caymax, M., Meuris, M. and Heyns, M. Capacitance-Voltage Characterization of GaAs-Oxide Interfaces. Journal of the Electrochemical Society, 2008, 155(12), H945-H950.

Ju, S.Y., Chen, P.C., Zhou, C.W., Ha, Y.G., Facchetti, A., Marks, T.J., Kim, S.K., Mohammadi, S. and Janes, D.B. 1/f noise of SnO2 nanowire transistors. Applied Physics Letters, 2008, 92(24).

Mahapatro, A.K., Ying, J.W., Ren, T. and Janes, D.B. Electronic transport through ruthenium-based redox-active molecules in metal-molecule-metal nanogap junctions. Nano Letters, 2008, 8(8), 2131-2136.

Ju, S., Ishikawa, F., Chen, P., Chang, H.K., Zhou, C.W., Ha, Y.G., Liu, J., Facchetti, A., Marks, T.J. and Janes, D.B. High performance In2O3 nanowire transistors using organic gate nanodielectrics. Applied Physics Letters, 2008, 92(22).

Ju, S., Li, J.F., Liu, J., Chen, P.C., Ha, Y.G., Ishikawa, F., Chang, H., Zhou, C.W., Facchetti, A., Janes, D.B. and Marks, T.J. Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry. Nano Letters, 2008, 8(4), 997-1004.

Lee, K., Lu, G., Facchetti, A., Janes, D.B. and Marks, T.J. Comparative passivation effects of self-assembled mono- and multilayers on GaAs junction field effect transistors. Applied Physics Letters, 2008, 92(12).

Xuan, Y., Wu, Y.Q. and Ye, P.D. High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm. IEEE Electron Device Letters, 2008, 29(4), 294-296.

Ju, S., Kim, S., Mohammadi, S., Janes, D.B., Ha, Y.G., Facchetti, A. and Marks, T.J. Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements. Applied Physics Letters, 2008, 92(2).

Xuan, Y., Wu, Y.Q., Shen, T., Qi, M., Capano, M.A., Cooper, J.A. and Ye, P.D. Atomic-layer-deposited nanostructures for graphene-based nanoelectronics. Applied Physics Letters, 2008, 92(1).

Shen, T., Wu, Y.Q., Capano, M.A., Rokhinson, L.P., Engel, L.W. and Ye, P.D. Magnetoconductance oscillations in graphene antidot arrays. Applied Physics Letters, 2008, 93(12).

Back, J.H., Kim, S., Mohammadi, S. and Shim, M. Low-frequency noise in ambipolar carbon nanotube transistors. Nano Letters, 2008, 8(4), 1090-1094.

Hong, W.K., Kim, B.J., Kim, T.W., Jo, G., Song, S., Kwon, S.S., Yoon, A., Stach, E.A. and Lee, T. Electrical properties of ZnO nanowire field effect transistors by surface passivation. Colloids and Surfaces a-Physicochemical and Engineering Aspects, 2008, 313, 378-382

Wu, Y.Q., Xu, M., Ye, P.D., Cheng, Z., Li, J., Park, J.S., Hydrick, J., Bai, J., Carroll, M., Fiorenza, J.G. and Lochtefeld, A. Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique. Applied Physics Letters, 2008, 93(24).

 

2007

Hu, W.D., Chen, X.S., Quan, Z.J., Zhang, X.M., Huang, Y., Xia, C.S., Lu, W. and Ye, P.D. Simulation and optimization of GaN-based metal-oxide-semiconductor high-electron-mobility-transistor using field-dependent drift velocity model. Journal of Applied Physics, 2007, 102(3), 034502.

Sui, Y., Wang, X. and Cooper, J.A. High-voltage self-aligned p-channel DMOS-IGBTs in 4H-SiC. IEEE Electron Device Letters, 2007, 28(8), 728-730.

Wu, Y.Q., Lin, H.C., Ye, P.D. and Wilk, G.D. Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs. Applied Physics Letters, 2007, 90(7), 072105.

Wu, Y.Q., Shen, T., Ye, P.D. and Wilk, G.D. Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3/GaN metal-oxide-semiconductor structures. Applied Physics Letters, 2007, 90(14), 143504.

Wu, Y.Q., Xuan, Y., Shen, T., Ye, P.D., Cheng, Z. and Lochtefeld, A. Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics. Applied Physics Letters, 2007, 91(2), 022108.

Xuan, Y., Lin, H.C. and Ye, P.D. Simplified surface preparation for GaAs passivation using atomic layer-deposited high-kappa dielectrics. IEEE Transactions on Electron Devices, 2007, 54(8), 1811-1817.

Xuan, Y., Ye, P.D. and Shen, T. Substrate engineering for high-performance surface-channel III-V metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 2007, 91(23), 232107.

Lin, H.C., Yang, T., Sharifi, H., Kim, S.K., Xuan, Y., Shen, T., Mohammadi, S. and Yea, P.D. Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric. Applied Physics Letters, 2007, 91(21), 212101.

Lin, H.C., Kim, S.K., Chang, D., Xuan, Y., Mohammadi, S., Ye, P.D., Lu, G., Facchetti, A. and Marks, T.J. Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics. Applied Physics Letters, 2007, 91(9), 092103.

Xuan, Y., Wu, Y.Q., Lin, H.C., Shen, T. and Ye, P.D. Submicrometer inversion-type enhancement-mode InGaAs MOSFET with atomic-layer-deposited Al2O3 as gate dielectric. IEEE Electron Device Letters, 2007, 28(11), 935-938.

Yang, T., Xuan, Y., Zemlyanov, D., Shen, T., Wu, Y.Q., Woodall, J.M., Ye, P.D., Aguirre-Tostado, F.S., Milojevic, M., McDonnell, S. and Wallace, R.M. Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric. Applied Physics Letters, 2007, 91(14), 142122.

Saha, A. and Cooper, J.A. A 1-kV 4H-SiC power DMOSFET optimized for low ON-resistance. IEEE Transactions on Electron Devices, 2007, 54(10), 2786-2791.

Yu, B., Ju, S.Y., Sun, X.H., Ng, G., Nguyen, T.D., Meyyappan, M. and Janes, D.B. Indium selenide nanowire phase-change memory. Applied Physics Letters, 2007, 91(13), 133119.

Hang, Q.L., Wang, F.D., Buhro, W.E. and Janes, D.B. Ambipolar conduction in transistors using solution grown InAs nanowires with Cd doping. Applied Physics Letters, 2007, 90(6), 062108.

Scott, A., Janes, D.B., Risko, C. and Ratner, M.A. Fabrication and characterization of metal-molecule-silicon devices. Applied Physics Letters, 2007, 91(3), 033508.

Kim, H.G., Deb, P. and Sands, T. Nanopatterned contacts to GaN. Journal of Electronic Materials, 2007, 36(4), 359-367.

Hong, W.K., Hwang, D.K., Park, I.K., Jo, G., Song, S., Park, S.J., Lee, T., Kim, B.J. and Stach, E.A. Realization of highly reproducible ZnO nanowire field effect transistors with n-channel depletion and enhancement modes. Applied Physics Letters, 2007, 90(24), 243103.

Ju, S., Lee, K., Yoon, M.H., Facchetti, A., Marks, T.J. and Janes, D.B. High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment. Nanotechnology, 2007, 18(15), 155201.

Ju, S., Li, J.Y., Pimparkar, N., Alam, M.A., Chang, R.P.H. and Janes, D.B. N-type field-effect transistors using multiple Mg-doped ZnO nanorods. IEEE Transactions on Nanotechnology, 2007, 6(3), 390-395.

Ju, S.Y., Facchetti, A., Xuan, Y., Liu, J., Ishikawa, F., Ye, P.D., Zhou, C.W., Marks, T.J. and Janes, D.B. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. Nature Nanotechnology, 2007, 2(6), 378-384.

Kim, S.K., Xuan, Y., Ye, P.D., Mohammadi, S., Back, J.H. and Shim, M. Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors. Applied Physics Letters, 2007, 90(16), 163108.

Peskin, U., Huang, Z. and Kais, S. Internal entanglement amplification by external interactions. Physical Review A, 2007, 76(1), 012102.

Liang, G.C., Xiang, J., Kharche, N., Klimeck, G., Lieber, C.M. and Lundstrom, M. Performance analysis of a Ge/Si core/shell nanowire field-effect transistor. Nano Letters, 2007, 7(3), 642-646.

Muralidharan, B. and Datta, S.
Generic model for current collapse in spin-blockaded transport. Physical Review B, 2007, 76(3).

Muralidharan, B., Ghosh, A.W., Pati, S.K. and Datta, S.
Theory of high bias coulomb blockade in ultrashort molecules. IEEE Transactions on Nanotechnology, 2007, 6(5), 536-544.

Salahuddin, S. and Datta, S. Interacting systems for self-correcting low power switching. Applied Physics Letters, 2007, 90(9).

Siddiqui, L., Ghosh, A.W. and Datta, S. Phonon runaway in carbon nanotube quantum dots. Physical Review B, 2007, 76(8).

Yanik, A.A., Klimeck, G. and Datta, S.
Quantum transport with spin dephasing: A nonequlibrium Green's function approach. Physical Review B, 2007, 76(4).

 


2003-2006

Butt, N.Z., Chang, A.M., Raza, H., Bashir, R., Liu, J. and Kwong, D.L. Low-frequency noise statistics for the breakdown characterization of ultrathin gate oxides. Applied Physics Letters, 2006, 88(11), 112901.

Ju, S., Janes, D.B., Lu, G., Facchetti, A. and Marks, T.J. Effects of bias stress on ZnO nanowire field-effect transistors fabricated with organic gate nanodielectrics. Applied Physics Letters, 2006, 89(19), 193506.

Ju, S., Lee, K., Janes, D.B., Dwivedi, R.C., Baffour-Awuah, H., Wilkins, R., Yoon, M.H., Facchetti, A. and Mark, T.J. Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics. Applied Physics Letters, 2006, 89(7), 073510.

Ju, S., Janes, D.B., Lu, G., Facchetti, A. and Marks, T.J. Effects of bias stress on ZnO nanowire field-effect transistors fabricated with organic gate nanodielectrics. Applied Physics Letters, 2006, 89(19), 193506.

Hu, W.D., Chen, X.S., Quan, Z.J., Xia, C.S., Lu, W. and Ye, P.D. Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects. Journal of Applied Physics, 2006, 100(7), 074501.

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