Physics/Chinese Academy of Sciences/2008
Primary collaborative faculty member/s:
- Devices fabrication, characterization nanostructures and nanoelectronic devices via micro-nanofabrication techniques.
- Measurement and understanding the physics in the electrical transport on novel 0D (Quantum dot), 1D (Nanowires) and 2D (Graphene) nanodevices at low temperature and high magnetic field.
- Study the surface strucutre and electronic properties of CVD graphene by STM.
Impact Statement & Explanation of Research:
Demonstrated metal-side-gated ambipolar graphene field effect transistors, fabricated in a one-step process without any gate dielectric deposition or graphene etching. The local metal side gates show promising ability to tune the field effect in graphene and can be used to control individual graphene nanodevices, with many potential applications in carbon-based electronics.