Appenzeller publications

List of publications (last 7 years)

1. Y. Sui and J. Appenzeller
   Graphene field-effect transistors - a transport study on the impact of the layer thickness
   accepted as Nano Letters - available online (2009).
   



2. T. Low, and J. Appenzeller
   Electronic transport properties of a tilted graphene pn junction
   accepted as PRB (2009).



3. D. Candebat, Y. Zhao, C. Sandow, B. Koshel, C. Yang, and J. Appenzeller
   InSb nanowire field-effect transistors - electrical characterization and material analysis
   67th Device Research Conference ISBN: 978-1-4244-3528-9, 13-14 (2009).



4. Y. Sui and J. Appenzeller
   Multi-layer graphene field-effect transistors for improved device performance
   67th Device Research Conference ISBN: 978-1-4244-3528-9, 199-200 (2009).



5. T. Low, S. Hong, J. Appenzeller, S. Datta, and M.S. Lundstrom
   Conductance asymmetry of graphene p-n junction
   IEEE Transactions on Electron Devices 56, 1292-1299 (2009).



6. J. Appenzeller, Y. Sui, and Z. Chen
   Graphene nanostructures for device applications
   Technical Digest of the 2009 Symposium on VLSI Technology, 124-127 (2009).



7. Z. Chen and J. Appenzeller
   Gate modulation of graphene contacts - on the scaling of graphene FETs
   Technical Digest of the 2009 Symposium on VLSI Technology, 128-129 (2009).



8. Z. Chen and J. Appenzeller
   Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devices
   IEDM Technical Digest, 509-512 (2008).



9. J. Appenzeller, J. Knoch, M.T. Bjork, H. Schmid, H. Riel, and W. Riess
   Towards Nanowire Electronics
   IEEE Transactions on Electron Devices 55, 2827-2845 (2008).



10. O. Gunawan, L. Sekaric, A. Ma jumdar, M. Rooks, J. Appenzeller, J.W. Sleights, S.
    Guha, and W. Haensch
    Measurement of carrier mobility in silicon nanowires
    Nano Letters 8 1566-1571 (2008).



11. J. Knoch, W. Riess and J. Appenzeller
    Outperforming the conventional scaling rules in the quantum capacitance limit
    IEEE Electron Device Letters 29 372-374 (2008).



12. J. Knoch and J. Appenzeller
    Tunneling phenomena in carbon nanotube field-effect transistors
    Phys. Stat. Sol. (a) 205 679-694 (2008).



13. Z. Chen, D. Farmer, S. Xu, R. Gordon, Ph. Avouris, and J. Appenzeller
    Externally assembled gate-all-around carbon nanotube field-effect transistor
    IEEE Electron Device Letters 29, 183-185 (2008).



14. J. Appenzeller
    Carbon nanotubes for high performance electronics - progress and prospect
    Proceedings of the IEEE 96, 201-211 (2008).



15. J. Knoch, M. Zhang, J. Appenzeller, and S. Mantl
    Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors
    Appl. Phys. A 87 351-357 (2007).
    



16. J. Knoch, S. Mantl, and J. Appenzeller
    Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices
    Solid State Electronics 51, 572-578 (2007).
    



17. Y.-M. Lin, J. Appenzeller, Z. Chen, and Ph. Avouris
    Electrical transport and 1/f noise in semiconducting carbon nanotubes
    Physica E 37, 72-77 (2007).
    



18. K. M. Indlekofer, J. Knoch, and J. Appenzeller
    Understanding Coulomb effects in nanoscale Schottky-barrier-FETs
    IEEE Transactions on Electron Devices 54, 1502-1509 (2007).
    



19. J. Appenzeller, Y.-M. Lin, J. Knoch, Z. Chen, and Ph. Avouris
    1/f noise in carbon nanotube devices - On the impact of contacts and device geometry
    IEEE Transactions on Nanotechnology 6, 368-373 (2007).
    



20. Z. Chen, J. Appenzeller, P. Solomon, Y.-M. Lin, and Ph. Avouris
    Gate work function engineering for nano-material based circuits
    ISSCC Technical Digest, 12-14 (2007).
    



21. M. Zhang, J. Knoch, S. Mantl, and J. Appenzeller
    Improved carrier injection in ultrathin-body SOI Schottky-Barrier MOSFETs
    IEEE Electron Device Letters 28, 223-225 (2007).
    



22. K. M. Indlekofer, J. Knoch, and J. Appenzeller
    Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures
    Phys. Rev. B 74, 113310-1-113310-4 (2006).
    



23. F. Rodriguez-Morales, R. Zannoni, J. Nicholson, M. Fischetti, K.S. Yngvesson, and
    J. Appenzeller
    Direct and heterodyne detection of microwaves in a metallic single wall carbon nanotube
    Appl. Phys. Lett. 89, 083502-1-083502-3 (2006).
    



24. J. Appenzeller, J. Knoch, E. Tutuc, M. Reuter, and S. Guha
    Dual-gate nanowire transistors with nickel silicide contacts
    IEDM Technical Digest, 555-558 (2006).
    



25. E. Tutuc, J. Appenzeller, M.C. Reuter, and S. Guha
    Realization of a Linear Germanium Nanowire p-n junction
    Nano Letters 6, 2070-2074 (2006).
    



26. J. Knoch, M. Zhang, S. Mantl, and J. Appenzeller
    On the performance of single-gated ultrathin body SOI Schottky-barrier MOSFETs
    IEEE Transactions on Electron Devices 53, 1669-1674 (2006).
    



27. Y.-M. Lin, J. Appenzeller, C.C. Tsuei, Z. Chen, and Ph. Avouris
    Reduction of 1/f noise in carbon nanotube devices
    64th Device Research Conference ISBN: 1-4244-9749-5, 279-280 (2006).
    



28. K.M. Indlekofer, J. Knoch, and J. Appenzeller
    Seamless transition from the single-electron regime to field-effect transistor operation of nanoscale Schottky-barrier FETs
    64th Device Research Conference ISBN: 1-4244-9749-5, 253-254 (2006).
    



29. E. Tutuc, J. Appenzeller, M.C. Reuter, and S. Guha
    Realization of a Ge nanowire p-n junction
    64th Device Research Conference ISBN: 1-4244-9749-5, 249-250 (2006).
    



30. Z. Chen, J. Appenzeller, P.M. Solomon, Y.-M. Lin, and Ph. Avouris
    High performance carbon nanotube ring oscillator
    64th Device Research Conference ISBN: 1-4244-9749-5, 171-172 (2006).
    



31. Y.-M. Lin, J. Appenzeller, J. Knoch, Z. Chen, and Ph. Avouris
    Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes
    Nano Letters 6, 930-936 (2006).
    



32. Z. Chen, J. Appenzeller, Y.-M. Lin, J.S. Oakley, A.G. Rinzler, J. Tang, S. Wind, P. Solomon, and Ph. Avouris
    An integrated logic circuit assembled on a single carbon nanotube
    Science 311, 1735 (2006).
    



33. J. Knoch and J. Appenzeller
    Carbon nanotube field-effect transistors - The importance of being small, pp. 371-402 in AmIware, Hardware Technology Drivers of Ambient Intelligence,
    (Editors: S.Mukherjee, E. Aarts, R. Roovers, F. Widdershoven, and M. Ouwerkerk), Springer, (2006).
    



34. J. Knoch, M. Zhang, Q.T. Zhao, ST. Lenk, S. Mantl, and J. Appenzeller
    Effective Schottky barrier lowering in silicon-on-insulator Schottky barrier metal-oxide-semiconductor field-effect transistors using dopant segregation
    Appl. Phys. Lett. 87, 263505-1-263505-3 (2005).
    



35. J. Appenzeller, Y.-M. Lin, J. Knoch, and Ph. Avouris
    Comparing carbon nanotube transistors - The ideal choice: A novel tunneling device design
    IEEE Transactions on Electron Devices 52, 2568-2576 (2005).
    



36. Y.-M. Lin, J. Appenzeller, Z. Chen, Z.-G. Chen, H.-M. Cheng, and Ph. Avouris
    High performance dual-gate carbon nanotube FETs with 40-nm gate length
    IEEE Electron Device Letters 26, 823-825 (2005).
    



37. K. M. Indlekofer, J. Knoch, and J. Appenzeller
    Quantum kinetic description of Coulomb effects in one-dimensional field-effect transistors
    Phys. Rev. B 72, 125308-1-125308-7 (2005).
    



38. Y.-M. Lin, J. Appenzeller, J. Knoch, and Ph. Avouris
    High-performance Carbon Nanotube Field-Effect Transistor with Tunable Polarity
    IEEE Transactions on Nanotechnology 4, 481-489 (2005).
    



39. J. Knoch and J. Appenzeller
    A novel concept for field-effect transistors - the tunneling carbon nanotube FET
    63th Device Research Conference ISBN: 0-7803-9040-7, 153-156 (2005).
    



40. Y.-M. Lin, J. Appenzeller, Z. Chen, Z.-G. Chen, H.-M. Cheng, and Ph. Avouris
    Demonstration of a high performance 40-nm-gate carbon nanotube field-effect transistor
    63th Device Research Conference ISBN: 0-7803-9040-7, 113-114 (2005).
    



41. Z. Chen, J. Appenzeller, J. Knoch, Y.-M. Lin, and Ph. Avouris
    Impact of the Nanotube Diameter on the Performance of CNFETs
    63th Device Research Conference ISBN: 0-7803-9040-7, 237-238 (2005).
    



42. Z. Chen, J. Appenzeller, J. Knoch, Y.-M. Lin, and Ph. Avouris
    The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors
    Nano Letters 5, 1497-1502 (2005).
    



43. D.V. Singh, K.A. Jenkins, and J. Appenzeller
    Direct measurements of frequency response of Carbon Nanotube Field Effect Transistors
    Electronics Letters 41, 280-282 (2005).
    



44. M. Zhang, J. Knoch, Q.T. Zhao, St. Lenk, J. Appenzeller, U. Breuer, and S. Mantl
    Dopant Segregation in Schottky-barrier SOI-MOSFETs
    Technical Digest ULIS ISBN: 88-900847-0-7, 23-26 (2005).
    



45. J. Knoch, S. Mantl, and J. Appenzeller
    Comparison of transport in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
    Solid State Electronics 49, 73-76 (2005).
    



46. Ph. Avouris, A. Afzali, J. Appenzeller, J. Chen, M. Freitag, C. Klinke, Y.-M. Lin, and J.C. Tsang
    Carbon Nanotube Electronics and Optoelectronics
    IEDM Technical Digest, 525-529 (2004).
    



47. Y.-M. Lin, J. Appenzeller, and Ph. Avouris
    Novel Carbon Nanotube FET Design with Tunable Polarity
    IEDM Technical Digest, 687-690 (2004).
    



48. J. Appenzeller, Y.-M. Lin, J. Knoch, and Ph. Avouris
    Band-to-band tunneling in carbon nanotube field-effect transistors
    Phys. Rev. Lett. 93, 196805-1-196805-4 (2004).
    



49. D. V. Singh, K. A. Jenkins, J. Appenzeller, and H.-S. P. Wong
    Frequency response of top-gated carbon nanotube field-effect transistors
    IEEE Transactions on Nanotechnology 3, 383-387 (2004).
    



50. Ph. Avouris and J. Appenzeller
    Electronics and Optoelectronics with Carbon Nanotubes
    The Industrial Physicist 10, 18-21 (2004).
    



51. J. Knoch, S. Mantl, Y.-M. Lin, Z. Chen, Ph. Avouris, and J. Appenzeller
    A novel device model for carbon nanotube transistors
    62th Device Research Conference ISBN: 0-7803-8284-6, 135-136 (2004).
    



52. Y.-M. Lin, J. Appenzeller, and Ph. Avouris
    Novel structures enabling bulk switching in carbon nanotube FETs
    62th Device Research Conference ISBN: 0-7803-8284-6, 133-134 (2004).
    



53. J. Appenzeller, J. Knoch, M. Radosavljevic, and Ph. Avouris
    Multi-mode transport in Schottky barrier carbon nanotube field-effect transistors
    Phys. Rev. Lett. 92, 226802-1-226802-4 (2004).
    



54. Y.-M. Lin, J. Appenzeller, and Ph. Avouris
    Ambipolar to unipolar conversion of carbon nanotube transistors by gate structure engineering
    Nano Letters 4, 947-950 (2004).
    



55. Th. Hunger, B. Lengeler, and J. Appenzeller
    Transport in ropes of carbon nanotubes - contact barriers and Luttinger liquid
    Phys. Rev. B 69, 195406-1-195406-4 (2004).
    



56. M. Radosavljevic, J. Appenzeller, Ph. Avouris, and J. Knoch
    High performance of potassium n-doped carbon nanotube field-effect transistors
    Appl. Phys. Lett. 84, 3693-3695 (2004).
    



57. J. Appenzeller and D. J. Frank
    Frequency dependent characterization of transport properties in carbon nanotube transistors
    Appl. Phys. Lett. 84, 1771-1773 (2004).
    



58. J. Appenzeller, M. Radosavljevic, J. Knoch, and Ph. Avouris
    Tunneling versus thermionic emission in one-dimensional semiconductors
    Phys. Rev. Lett. 92, 048301-1-048301-4 (2004).
    



59. D. J. Frank and J. Appenzeller
    High frequency response in carbon nanotube field-effect-transistors
    IEEE Electron Device Letters 25, 34-36 (2004).
    



60. S. Wind, M. Radosavljevic, J. Appenzeller, and Ph. Avouris
    Transistor structures for the study of scaling in carbon nanotubes
    J. Vac. Sci. Technol. B, 21, 2856-2859 (2003).
    



61. S. Wind, J. Appenzeller, and Ph. Avouris
    Lateral scaling in carbon nanotube field-effect transistors
    Phys. Rev. Lett. 91, 058301-1-058301-4 (2003).
    



62. J. Appenzeller, J. Knoch, and Ph. Avouris
    Carbon nanotube field-effect transistors - an example of an ultra-thin body Schottky barrier device
    61th Device Research Conference ISBN: 0-7803-7727-3, 167-170 (2003).
    



63. Ph. Avouris, J. Appenzeller, R. Martel, and S. Wind
    Carbon Nanotube Electronics
    Proceedings of the IEEE 91, 1772-1784 (2003).
    



64. V. Derycke and J. Appenzeller
    Carbon Nanotube Electronics, p.D8.1-D8.19 in Fundamentals of Nanoelectronics,
    (series: Matter and Materials), published by Research Center, Germany (2003).
    



65. M. Radosavljevic, J. Appenzeller, V. Derycke, R. Martel, Ph. Avouris, A. Loiseau, J.-L. Cochon, and D. Pigache
    Electrical properties and transport in boron nitride nanotubes
    Appl. Phys. Lett. 82, 4131-4133 (2003).
    



66. J. Appenzeller, E. Joselevich, and W. Hoenlein
    Carbon Nanotubes for Data Processing, p.473-499 in Nanoelectronics and Information Technology,
    (Editor: R. Waser), Wiley-VCH Verlag, Berlin (2003).
    



67. H.-S.P. Wong, J. Appenzeller, V. Derycke, R. Martel, S. Wind, and Ph. Avouris
    Carbon nanotube field effect transistors - fabrication, device physics, and circuit implications
    ISSCC Technical Digest, 370-371 (2003).