Birck Nanotechnology Center

Ultra-High Mobility GaAs MBE


General Information

Equipment Name: Ultra-High Mobility GaAs MBE

Coral Name: N/A

FIC: Michael Manfra

Process/Equipment Owner:

Geoff Gardner

Location: BNC 2217


System Information


General Description:

The Veeco GenII Molecular Beam Epitaxy (MBE) System is capable of growing on 2" substrates. This MBE has traditional features such as a Load Lock chamber and Reflective High Energy Electron Diffraction (RHEED). This MBE also has custom features such as enhanced pumping capacity, all metal valves, dedicated wafer outgassing buffer chamber and custom sources. Source materials include, As, In, Al, and Ga. There are also S and C sources for doping. Advanced control software allows for growth automation and repeatable complex structures such as super lattices..


This tool has restricted use policies. However samples and structures can be considered for fabrication on an individual basis.


Useful System Links

Equipment Use Fees