GaN, Graphene and Tunnel FETs
May 3 @ 1:30 PM - 2:30 PM - BRK 1001
Huili (Grace) Xing
John Cardinal O’Hara CSC Associate Professor of Electrical Engineering
University of Notre Dame
In this talk, I will review the recent development of GaN electronics , graphene THz modulators  and tunnel field effect transistors (FETs) , three different topics, in our group.
Our current research topics on GaN electronics include high-speed transistors, power switches, and THz devices based on an NDR-gated plasmonic channel to realize THz emission, detection and amplification.
Graphene, an atomically thin 2D crystal with zero bandgap, has been touted for many intriguing applications, particularly for transparent touch screens and wearable electronics. Its optoelectronic properties are equally noteworthy. We successfully constructed THz modulators using graphene for the first time, another new avenue for graphene research.
Tunnel FETs are promising replacements of Si-MOSFETs beyond 2020 due to their promise to achieve Ion/Ioff > 103 with Ion > 100 uA/um at low supply voltages (up to 0.5 V). To date we have demonstratedIon/Ioff ~ 106, Ion ~ 50 uA/um. Challenges ahead include electrostatic control, defect-assisted tunneling and interface state density and parasitics.
Huili (Grace) Xing is currently the John Cardinal O’Hara CSC Associate Professor of Electrical Engineering at the University of Notre Dame. She obtained B.S. in physics from Peking University (1996), M.S. in Material Science from Lehigh University (1998) and Ph.D. in Electrical Engineering from University of California, Santa Barbara (2003), respectively. Her research focuses on development of III-V nitride and 2-D crystal semiconductor growth and (opto)electronic devices, especially the interplay between the material quality and device developments. More recent research interests include THz and bioelectronic applications. She is a recipient of AFOSR Young Investigator Award and NSF CAREER Award.
- Jaime Turner