Dr. Debdeep Jena Seminar
March 7 @ 11:00 AM - 12:00 PM - BRK 1001
Polarization fields are a consequence of broken symmetry in III-Nitride semiconductor heterostructures, and have remarkable consequences in the physics and device design. In the first part of the presentation, I will show how we have exploited the built-in spontaneous and piezoelectric polarization in III-Nitrides to make electronic and optical devices faster, smaller, and better. In the second part of the presentation, I will talk about another consequence of symmetry - that for scaling and low-power logic electric devices using 2D materials such as graphene, MoS2, and related thin crystals. I will present experimental data on 2D crystal transistors and phototransistors, and hopefully will be able to combine the two parts of the story into one conclusion.
Debdeep Jena received the B. Tech. degree with a major in Electrical Engineering and a minor in Physics from the Indian Institute of Technology (IIT) Kanpur in 1998, and the Ph.D. degree in Electrical and Computer Engineering at the University of California, Santa Barbara (UCSB) in 2003. He joined the faculty of the department of Electrical Engineering at the University of Notre Dame in 2003. His research and teaching interests are in the MBE growth and device applications of quantum semiconductor heterostructures (currently III-V nitride semiconductors), investigation of charge transport in nanostructured semiconducting materials such as graphene, nanowires and nanocrystals, and their device applications, and in the theory of charge, heat, and spin transport in nanomaterials. He is the author on several journal publications, including articles in Science, Nature journals, Physical Review Letters, and Electron Device Letters among others. He has received two best student paper awards in 2000 and 2002 for his Ph.D. dissertation research, the NSF CAREER award in 2007, and the Joyce award for excellence in undergraduate teaching in 2010.
- Jaime Turner