STS ASE 2

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STS ASE 2

General Information

iLab Name: STS ASE 2

iLab Core: BRK Etch Core

FIC: Dimitrios Peroulis

Owner: Sean Rinehart

Location: Cleanroom-Bay L

Max Wafer Size: 6

System Information

General Description

This system is used to anisotropically etch Silicon substrates.

Capabilities

The STS Deep Reactive Ion Etch (DRIE) system uses SF6/O2 for etching and C4F8 for passivation. It is designed to provide high-aspect-ratio using inductively coupled plasma (ICP) and Bosch process.

Materials Compatibility

Not Applicable

Notes