STS ASE 1

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STS ASE 1

General Information

iLab Name: STS ASE 1

iLab Core: BRK Etch Core

FIC: Dimitrios Peroulis

Owner: Sean Rinehart

Location: Cleanroom-Bay L

Max Wafer Size: 6

System Information

General Description

This system is used to anisotropically etch Silicon substrates.

Capabilities

The STS Deep Reactive Ion Etch (DRIE) system uses SF6/O2 for etching and C4F8 for passivation. It is designed to provide high-aspect-ratio etching using inductively coupled plasma (ICP) and Bosch process. Utilizes electromagnets during etch to reduce flux in the plasma to minimize sidewall roughness. Has an SOI option. Utilizes electrostatic clamp, allowing full wafer exposure.

Materials Compatibility

Not Applicable

Notes