STS AOE DRIE

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STS AOE DRIE

General Information

iLab Name: STS AOE

iLab Core: BRK Etch Core

FIC: Dimitrios Peroulis

Owner: Sean Rinehart

Location: Cleanroom-Bay L

Max Wafer Size: 4

System Information

General Description

This system is used to dry etch dielectrics, metals, and polymer films.

Capabilities

The STS AOE Deep Reactive Ion Etch (DRIE) system uses SF6, CF4, C4F8, Ar, O2 and He gases. It is designed to provide high-aspect-ratio etching using inductive coupled plasma (ICP). Utilizes weighted clamp which masks 1/4" of the wafer perimeter.

Materials Compatibility

Not Applicable

Notes