GaN MBE

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GaN MBE

General Information

FIC: Michael Manfra

Owner: Geoff Gardner

Location: BNC Lab 2277

System Information

General Description

The RIBER 2000 Molecular Beam Epitaxy (MBE) System is capable of growing on 2" substrates. This MBE features a Load Lock chamber, Reflective High Energy Electron Diffraction (RHEED) and automation software. Sources include nitrogen plasma, Ga, In, Al, and Si for doping.

Materials Compatibility

Check with Michael Manfra

Notes

This tool has restricted use policies. However samples and structures can be considered for fabrication on an individual basis.